| 申请日期 | 2025-06-29 | 申请号 | WOCA09001157 |
| 公开（公告）号 | WO2010020046A1 | 公开（公告）日 | 2010-02-25 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | MCMASTER UNIVERSITY; THE UNIVERSITY OF MANCHESTER; UNIVERSITY OF SURREY; KNIGHTS Andrew P; HALSALL Matthew; GWILLIAM Russell Mark | ||
| 简介 | A doped dielectric layer and a method for forming the doped dielectric layer are provided. The doped dielectric layer comprises (a) a silicon dioxide or silicon oxynitride layer (b) doped with from about 0.01 to about 20 atomic percent of one or more rare-earth elements, the one or more rare-earth element being distributed throughout the dielectric layer. Semiconductor structures comprising the above dielectric layer are also provided. | ||
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