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LIGHT SOURCE FOR SEMICONDUCTOR LITHOGRAPHY 发明申请

2023-03-22 4170 562K 0

专利信息

申请日期 2025-07-08 申请号 JP2008201897
公开(公告)号 JP2010040329A 公开(公告)日 2010-02-18
公开国别 JP 申请人省市代码 全国
申请人 UNIV KANSAI
简介 PROBLEM TO BE SOLVED : To provide a light source for semiconductor lithography which can generate short wavelength light optimal for forming a high integration circuit on a semiconductor wafer, without generating debris that impedes transfer of a circuit pattern to the semiconductor wafer. SOLUTION : This is a light source for semiconductor lithography which generates short wavelength light for forming a circuit pattern on the semiconductor wafer, and is provided with a light source body having an outer periphery wall that demarcates an inner space in which a rare gas or a mixed gas containing the rare gas is filled in a negative pressure state and a magnetic field generating means which generates a rotating magnetic field around a prescribed axial line in the internal space. As for the light source body, at least the outer periphery wall is constructed of a non-magnetic material having electric insulation property, and a light emitting part which emits a short wavelength light component or light including that light component from the internal space to the outside is formed at least at a part. COPYRIGHT : (C)2010, JPO&INPIT


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