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ENGINEERED STRUCTURE FOR HIGH BRIGHTNESS SOLID-STATE LIGHT EMITTERS 发明申请

2023-09-25 3340 2140K 0

专利信息

申请日期 2025-06-28 申请号 US12508033
公开(公告)号 US20100032687A1 公开(公告)日 2010-02-11
公开国别 US 申请人省市代码 全国
申请人 CALDER IAIN; MINER CARLA; CHIK GEORGE; MACELWEE THOMAS
简介 Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centres in a host matrix for emitting light of a particular colour or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centres, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula SiaAlbOcNd, or rare earth oxides. For efficient impact excitation, corresponding drift layers adjacent each active layer have a thickness related to a respective excitation energy of an adjacent active layer. A stack of active layers emitting different colours may be combined to provide white light. For rare earth species having a host dependent emission spectrum, spectral emission of the stack may be tuned by appropriate selection of a different host matrix in successive active layers.


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