| 申请日期 | 2025-08-15 | 申请号 | US12094414 |
| 公开（公告）号 | US20100034232A1 | 公开（公告）日 | 2010-02-11 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Fabrice Gourbilleau; David Bréard; Richard Rizk; Jean Louis Doualan | ||
| 简介 | A laser amplification structure comprising an active medium and at least two electrodes disposed on either side of the active medium, the active medium comprising a first layer of a silicon oxide doped with rare earth ions, wherein the first silicon layer is co-doped with silicon nanograins and rare earth ions. | ||
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