| 简介 |
A plasma process device comprises a beam-shaped spacer (7) disposed in the upper opening of a chamber (3) opposed to a substrate (2) and supporting a dielectric plate (8). The dielectric plate (8) is supported by the beam-shaped spacer (7). The beam-shaped spacer (7) has process gas introducing orifices (31, 36) facing to the substrate (2) and inclined at a depression angle Rd and rare gas introducing orifices (41) facing to the dielectric plate (8) and inclined at an elevation angle Re. In a high-pressure high-power process, the processing rate such as the etching rate is improved and the wear of the dielectric plate (8) is effectively reduced.COPYRIGHT KIPO & WIPO 2010 |
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