| 简介 |
PROBLEM TO BE SOLVED : To provide a technology for increasing specific resistivity of a titanium nitride film.
SOLUTION : By irradiating the titanium nitride film formed on a semiconductor substrate with plasma obtained by changing a processing gas containing a rare gas or nitrogen without containing oxygen into plasma, specific resistivity of the titanium nitride film is increased. In this case, a gas containing a rare gas without containing oxygen, a gas containing nitrogen without containing oxygen, and a gas containing a rare gas and nitrogen without containing oxygen, are included in the processing gas.
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