| 申请日期 | 2025-07-18 | 申请号 | JP2003515451 |
| 公开（公告）号 | JP4410847B2 | 公开（公告）日 | 2010-02-03 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | INVENSIL | ||
| 简介 | Process for preparing photovoltaic quality silicon comprises : oxygen or chlorine refining giving a product with <= 100 ppm of iron, re-melting in a neutral atmosphere in electrical crucible furnace, transfer of molten silicon to plasma refining in crucible furnace; refining under plasma with a plasmagenic gas; and pouring into ingot-mold under controlled atmosphere by segregated solidification. An Independent claim is also included for the purified silicon obtained. | ||
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