| 简介 |
PROBLEM TO BE SOLVED : To obtain a semiconductor device exhibiting excellent compatibility with the structure of conventional Si-MOS transistor and applicable to optical interconnect in which high emission efficiency can be attained easily and surely. SOLUTION : An MIS type light emitting element is constituted similarly to an MIS type (MOS type) transistor. A gate insulation film 3 is formed by adding a light emitting substance, e.g. a semiconductor nanocrystal of Si, SiGe or Ge, polycrystal or microcrystal of a direct transition semiconductor, a rare earth element of Er or Eu, or a fluorescent substance of ZnS : Mn, or the like. Light is emitted from the gate insulation film 3 by applying a specified voltage to the source/drain 2 and a specified bias to the gate electrode 4. |
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