| 申请日期 | 2025-06-29 | 申请号 | US11253525 |
| 公开（公告）号 | US7655327B2 | 公开（公告）日 | 2010-02-02 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Petar Atanackovic | ||
| 简介 | Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure. | ||
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