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ATOMIC LAYER DEPOSITION OF HIGH QUALITY HIGH-K TRANSITION METAL AND RARE EARTH OXIDES 检索报告

2023-01-01 2440 50K 0

专利信息

申请日期 2025-06-25 申请号 WOUS05027173
公开(公告)号 WO2006026018A3 公开(公告)日 2010-01-28
公开国别 WO 申请人省市代码 全国
申请人 INTEL CORPORATION; METZ Matthew; BRAZIER Mark; GLASSMAN Timothy; THOMAS Christopher; FOLEY Lawrence; PARKER Christopher; ZHOU Ying; KUHN Markus; DATTA Suman; KAVALIEROS Jack; DOCZY Mark; BRASK Justin; CHAU Robert
简介 Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.


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