| 简介 |
PROBLEM TO BE SOLVED : To provide a plasma etching method which can suppress the occurrence of bowing compared to a conventional method and can perform finer and accurate processing, and also to provide a control program and a computer storage medium.
SOLUTION : The plasma etching method includes a first organic film etching step where at least a portion of the organic film 102 is etched in forming a mask pattern of a to-be-etched film 101 by etching an organic film 102; a treatment step where an Si-containing film 103 and the organic film 102 are exposed to plasma of a rare gas after the first organic film-etching step; and a second organic film-etching step where the rest of the organic film 102 is etched after the treatment step.
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