| 简介 |
A resistance memory element includes an elementary body and opposing electrodes separated by at least a portion of the elementary body. The elementary body is preferably made of a strontium titanate-based semiconductor ceramic expressed by the formula : (Sr1−xAx)v(Ti1−yBy)wO3 (where A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies the relationships 0.001≦x+y≦0.02 (where 0≦x≦0.02 and 0≦y≦0.02) and 0.87≦v/W≦1.030. This semiconductor ceramic changes the switching voltage depending on, for example, the number of grain boundaries in the portion between the opposing electrodes. |
客服热线：
手机版
二维码
