客服热线:18202992950

Resistance memory element 发明授权

2023-11-08 4050 929K 0

专利信息

申请日期 2025-07-12 申请号 US12352689
公开(公告)号 US7649768B2 公开(公告)日 2010-01-19
公开国别 US 申请人省市代码 全国
申请人 Sakyo Hirose
简介 A resistance memory element includes an elementary body and opposing electrodes separated by at least a portion of the elementary body. The elementary body is preferably made of a strontium titanate-based semiconductor ceramic expressed by the formula : (Sr1−xAx)v(Ti1−yBy)wO3 (where A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies the relationships 0.001≦x+y≦0.02 (where 0≦x≦0.02 and 0≦y≦0.02) and 0.87≦v/W≦1.030. This semiconductor ceramic changes the switching voltage depending on, for example, the number of grain boundaries in the portion between the opposing electrodes.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4