| 简介 |
Provided is a plasma CVD device wherein a thin film is deposited without using a filament. A plasma CVD device is characterized in that it comprises a chamber (1), ring-shaped ICP electrodes (17, 18) arranged in the chamber, first high-frequency power supplies (7, 8) connected electrically with the ICP electrodes, a gas supply mechanism for supplying a raw material gas into the chamber, an exhaust mechanism for exhausting the chamber, a disk substrate (2) arranged in the chamber opposite to the ICP electrodes, a second high frequency power supply (6) connected with the disk substrate, an earth electrode arranged in the chamber opposite to the ICP electrodes on the opposite side of the disk substrate, and plasma walls (24, 25) provided in the chamber to surround the space between the ICP electrodes and the disk substrate, and that the plasma walls are at a float potential. |
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