客服热线:18202992950

METHOD FOR MANUFACTURING VARISTOR 发明申请

2023-02-23 3710 204K 0

专利信息

申请日期 2025-06-27 申请号 JP2008141185
公开(公告)号 JP2009289992A 公开(公告)日 2009-12-10
公开国别 JP 申请人省市代码 全国
申请人 TDK CORP
简介 PROBLEM TO BE SOLVED : To provide a method for easily manufacturing a varistor wherein the size of an external electrode and a resistor is sufficiently made very small while maintaining successful varistor characteristics.SOLUTION : The method has processes of : forming a plurality of external electrode pairs 30 constituted of external electrodes 32, 34 opposite to each other on one surface 10a of a varistor element 10; forming the resistor on one surface 10a of the varistor element 10 so that the plurality of external electrodes 30 are connected to each other, and the external electrodes 32 and the external electrodes 34 are connected to each other; and forming a connector 20 by removing the resistor formed on an area between the adjacent external electrode pairs 30 by irradiation of a laser beam. The varistor element 10 contains ZnO as a principle component, and contains Ca oxide, Si oxide and oxide of rare earth metal as assistant components, the ratio X of the Ca oxide expressed in terms of a Ca atom to the whole principal component is 2-80 atom%, the ratio Y of the Si oxide expressed in terms of a Si atom is 1-40 atom%, and the varistor element satisfies 1≤X/Y<3.COPYRIGHT : (C)2010, JPO&INPIT


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4