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NEUTRAL PARTICLE IRRADIATION TYPE CVD APPARATUS 发明申请

2023-12-01 2860 55K 0

专利信息

申请日期 2025-07-09 申请号 JP2008141565
公开(公告)号 JP2009290025A 公开(公告)日 2009-12-10
公开国别 JP 申请人省市代码 全国
申请人 UNIV TOHOKU; SEMICONDUCTOR TECH ACAD RES CT
简介 PROBLEM TO BE SOLVED : To provide a neutral particle irradiation type CVD apparatus capable of suppressing gas dissociation due to high-energy electrons or UV light and forming an excellent film having a planned molecular structure. SOLUTION : A neutral particle beam generating means 11 excites a rare gas to generate plasma, imparts an electric field to the charged particles in the plasma to impart a predetermined energy, and neutralizes the charged particles to generate a neutral particle beam NB. A reaction chamber 10 is configured such that a material gas is introduced, part of the material gas is dissociated by the neutral particle beam under control of energy generated by a neutral particle generating means and polymerized, and a film is deposited on a substrate 14. COPYRIGHT : (C)2010, JPO&INPIT


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