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SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET 发明申请

2023-02-03 2520 4524K 0

专利信息

申请日期 2025-07-12 申请号 WOJP09060349
公开(公告)号 WO2009148154A1 公开(公告)日 2009-12-10
公开国别 WO 申请人省市代码 全国
申请人 Idemitsu Kosan Co Ltd; KAWASHIMA Hirokazu; YANO Koki; UTSUNO Futoshi; INOUE Kazuyoshi
简介 Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film.  Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide.  The composition amounts (atomic%) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula : In/(In + Ga + Zn) < 0.75


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