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ELECTRONIC PACKAGE FORMED USING LOW-TEMPERATURE ACTIVE SOLDER INCLUDING INDIUM, BISMUTH, AND/OR CA 发明授权

2023-11-02 1760 483K 0

专利信息

申请日期 2025-06-28 申请号 EP05786351
公开(公告)号 EP1749315B1 公开(公告)日 2009-12-09
公开国别 EP 申请人省市代码 全国
申请人 S Bond Technologies LLC
简介 An active solder alloy, an electronic device package including the active solder alloy bonding an electronic device to a substrate, and a method of forming high-strength joints by soldering using the solder alloy. The alloy contains up to about 10% by weight of an element or a mixture of elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, or tantalum; between about 0.1 and 5% by weight of an element or a mixture of elements selected from the group of the lanthanides (rare earths); between about 0.01 and 1% by weight of gallium up to about 10% by weight of silver; up to about 2% by weight of magnesium; and a remainder consisting of tin, bismuth, indium, cadmium, or a mixture of two or more of these elements. The alloy enables low-temperature (less than about 180° C.) soldering within relatively narrow melting ranges (less than about 10° C.).


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