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HIGH-TEMPERATURE SUPERCONDUCTOR LAYER ARRANGEMENT 发明申请

2023-12-04 2890 772K 0

专利信息

申请日期 2025-07-22 申请号 US12412530
公开(公告)号 US20090298698A1 公开(公告)日 2009-12-03
公开国别 US 申请人省市代码 全国
申请人 Michael BACKER; Oliver BRUNKAHL
简介 A high-temperature superconductor layer arrangement includes at least one substrate and a textured buffer layer made of oxidic material that permits textured growth of a high-temperature superconductor. Surprisingly, a layer of the buffer material made of a rare-earth element cerium oxide containing lanthanum as the rare-earth element may be used to produce a homogeneous buffer layer in just one coating operation, where appropriate. The buffer layer material may be a rare-earth oxide of the general formula : Ln′2−xLn″xCe′2−yM″yO7±z, wherein 0≦x, y, z≦1, in which Ln′ and Ln″ each represents a rare-earth element, independently of each other, and M″ represents a trivalent or tetravalent or pentavalent metal.


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