| 简介 |
PROBLEM TO BE SOLVED : To provide a method for producing a SiC single crystal having high crystallinity by a solution method.
SOLUTION : The SiC crystal is grown on a growth surface of a seed crystal serving as an Si surface using an Si-Cr-Ni-C melt comprising Si, C, Cr and Ni or an Si-Cr-C melt. The ratio (atomic ratio) of Ni to Cr (Ni/Cr) in the melt is ≤0.2. The melt comprises at least one element other than Si, Cr, Ni or C, chosen from a rare-earth element, a transition metal element and an alkaline earth metal element, preferably Ce.
COPYRIGHT : (C)2010, JPO&INPIT |
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