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SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF 发明申请

2023-02-03 1480 6172K 0

专利信息

申请日期 2025-07-10 申请号 JP2009118275
公开(公告)号 JP2009263795A 公开(公告)日 2009-11-12
公开国别 JP 申请人省市代码 全国
申请人 NIPPON MINING CO
简介 PROBLEM TO BE SOLVED : To provide a high density target having extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production. SOLUTION : Disclosed is a sintered sputtering having a structure where the average crystallite size is 1 nm to 50 nm and comprise an alloy having a three-component system or greater containing as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. The target is manufactured by sintering atomized powder. COPYRIGHT : (C)2010, JPO&INPIT


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