| 申请日期 | 2025-07-14 | 申请号 | US11606812 |
| 公开（公告）号 | US7611972B2 | 公开（公告）日 | 2009-11-03 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Shrinivas Govindarajan | ||
| 简介 | Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer. | ||
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