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Conductive silicon nitride materials and method for producing the same 发明授权

2023-12-01 2680 1596K 0

专利信息

申请日期 2025-07-09 申请号 US11664072
公开(公告)号 US7612006B2 公开(公告)日 2009-11-03
公开国别 US 申请人省市代码 全国
申请人 Katsutoshi Komeya; Junichi Tatami; Takeshi Meguro; Tomofumi Katashima; Toru Wakihara
简介 To provide a sintered silicon nitride with conductivity and densification, an oxide of titanium group elements, such as titanium oxide, hafnium oxide, zirconium oxide and the like, aluminum oxide and/or aluminum nitride is added as needed to silicon nitride-oxidant of rare-earth elements-aluminum oxide system or silicon nitride-oxide of rare-earth elements-magnesia system, and then specified quantity of carbon nonotube (CNT) is added to the above mixture. CNT generates silicon carbide after the reaction with contiguous or proximal silicon nitride and the like depending on the sintering duration at high temperature. Since silicon carbide is generated along with nanotubes, the silicon carbide functions as conductor with excellent heat resistance, corrosion resistance and the like.


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