| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing an SOI substrate, in which not only a quality silicon epitaxial layer is laminated on an SOI layer of the SOI substrate, but also bonding strength of the SOI substrate is increased.
SOLUTION : In the method for manufacturing an SOI substrate having a thick SOI layer, an ion-implanted layer is formed by implanting at least one sort of gas ions out of hydrogen ions and rare gas ions from a surface of a bond wafer, the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded to each other through an oxide film, and then the bond wafer is delaminated along the ion-implanted layer to produce the SOI substrate having the SOI layer. Then, heat treatment is applied to the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and after polishing the surface of the SOI layer by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.
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