| 简介 |
PROBLEM TO BE SOLVED : To provide an LED capable of generating a light of arbitrary chroma regardless of degree of dislocation density, particularly, a new semiconductor light emitting device that can be preferably used as a white LED of three primary colors or more. SOLUTION : The semiconductor emitting device 20 comprises a ground layer 2, the ground layer 2 comprising an AIN layer, and a first clad layer 3 comprising an n-GaN with bigger lattice constant than that of the high density crystal AIN layer. Further, an emitting layer 5 comprises a substrate 17 comprising an i-GaN and insular crystals 12-1 to 12-5 comprising an i-AlGaInN formed so as to be separated from each other in the substrate. Moreover, at least one kind of rare earth element is contained in at least either the substrate 17 or the insular crystals 12-1 to 12-5. COPYRIGHT : (C)2005, JPO&NCIPI |
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