| 申请日期 | 2025-07-08 | 申请号 | KR1020080010337 |
| 公开（公告）号 | KR100924853B1 | 公开（公告）日 | 2009-10-27 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | TOKYO ELECTRON LIMITED | ||
| 简介 | A plasma etching method etches an organic film formed on a target substrate by using a plasma of a processing gas via a silicon-containing mask. The processing gas is a gaseous mixture of an oxygen-containing gas, a rare gas and a carbon fluoride gas. A computer-executable control program controls a plasma etching apparatus to perform the plasma etching method. A computer-readable storage medium stores therein a computer-executable control program. | ||
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