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SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF 发明申请

2023-02-20 3010 6176K 0

专利信息

申请日期 2025-07-04 申请号 JP2009118276
公开(公告)号 JP2009242947A 公开(公告)日 2009-10-22
公开国别 JP 申请人省市代码 全国
申请人 NIPPON MINING CO
简介 PROBLEM TO BE SOLVED : To provide a high density target having an extremely fine and uniform structure manufactured with a sintering method, in place of the conventional bulk metal glass produced by quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production. SOLUTION : A sintered sputtering target which is amorphous and has a structure where the average crystallize size is ≤50 nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. COPYRIGHT : (C)2010, JPO&INPIT


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