| 申请日期 | 2025-06-28 | 申请号 | KR1020090026504 |
| 公开（公告）号 | KR100924185B1 | 公开（公告）日 | 2009-10-22 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | CASIO COMPUTER CO LTD | ||
| 简介 | A method of manufacturing an electrical insulation film includes (i) forming an R film containing at least one rare earth element R selected from the group including Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu on at least a portion of a surface of a metal substrate where an electrical insulation property is needed, (ii) hydrogenating the R film under an inert gas atmosphere, which contains a hydrogen gas, to form an RH2 film; and (iii) oxidizing the RH2 film to form an R2O3 film. | ||
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