| 简介 |
A high thermal conductive silicon nitride sintered body of this invention is characterized by containing : 2.0 to 17.5% by weight of a rare earth element in terms of the amount of an oxide thereof; 0.3 to 3.0% by weight of Mg in terms of the amount of an oxide thereof; if necessary, at most 1.5% by weight of at least one of calcium (Ca) and strontium (Sr) in terms of an oxide thereof, if necessary at most 1.5% by weight of at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo and W in terms of the amount of an oxide thereof, and at most 0.3% by weight of Al, Li, Na, K, Fe, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, comprising a silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase formed in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 70 W/m . K, and a three-point bending strength of at least 700 MPa at a room temperature. In addition, the sintered body has a small surface roughness even if the sintered body is not subjected to a grinding work, and exhibits an excellent strength characteristics. |
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