| 简介 |
PROBLEM TO BE SOLVED : To lessen the frequency of heat processing a high temperatures (over 600 deg.C) and realize lower temperature processing (600 deg.C or less), process simplification and throughput improvement. SOLUTION : The method comprises forming impurity regions 108 containing a rare gas element (called rare gas) and one or a plurality of kinds of additives selected from H, H2 , O, O2 , P in a semiconductor film having a crystal structure, using a mask 106b, heat treating to getter a metal element contained in the semiconductor film to segregate it in the impurity regions 108 and patterning with use of the mask to form a semiconductor layer 109 of the semiconductor film having a crystal structure. |
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