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SILICON NITRIDE SINTERED COMPACT 发明申请

2023-06-04 3580 81K 0

专利信息

申请日期 2025-07-14 申请号 JP2008080822
公开(公告)号 JP2009234826A 公开(公告)日 2009-10-15
公开国别 JP 申请人省市代码 全国
申请人 KYOCERA CORP
简介 PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact having high wear resistance and improved chipping-off resistance. SOLUTION : In the silicon nitride sintered compact, a surface region where the content of RE element (where, RE is at least one of yttrium or rare earth element) is constant within 5% to the content of that in the inside of the silicon nitride sintered compact, and the content of the magnesium element is less than 5% to the content of that of the inside of the silicon nitride sintered compact, exists in the surface of the silicon nitride sintered compact containing silicon nitride as main body, an RE element compound and a magnesium compound. COPYRIGHT : (C)2010, JPO&INPIT


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