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SEMICONDUCTOR MANUFACTURING COMPONENT AND METHOD OF MANUFACTURING THE SAME 发明申请

2023-11-08 2080 55K 0

专利信息

申请日期 2025-07-13 申请号 JP2008080838
公开(公告)号 JP2009234828A 公开(公告)日 2009-10-15
公开国别 JP 申请人省市代码 全国
申请人 KYOCERA CORP
简介 PROBLEM TO BE SOLVED : To provide a semiconductor manufacturing component capable of keeping the performance and the reliability of a semiconductor high and a method of manufacturing the same. SOLUTION : The semiconductor manufacturing component is formed by removing a grain boundary layer on the surface layer of a base body 1 comprising a silicon nitride crystalline particle 3 and the grain boundary layer and composed of silicon nitride sintered compact having ≥98% relative density, providing a porous layer 5 formed by joining the silicon nitride crystalline particles 3 three dimensionally and providing a dense high purity silicon nitride layer 6 substantially comprising the silicon nitride on the surface of the porous layer 5. Even in transportation of the silicon wafer placed on the dense high purity silicon nitride layer 6, the silicon wafer does not come into contact with, for example, an element of a rare earth element or aluminum element or the like constituting the conventional grain boundary layer to prevent the contamination of the silicon wafer and the performance or the reliability of the semiconductor is not prevented from the deterioration. COPYRIGHT : (C)2010, JPO&INPIT


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