| 简介 |
PROBLEM TO BE SOLVED : To suppress characteristic variation of a semiconductor device by suppressing reaction of high-dielectric-constant insulating films to other component members even after a heat treatment when the semiconductor device is manufactured by forming a gate insulating film and an interlayer insulating film of the thermally stable high-dielectric-constant insulating films.
SOLUTION : In the semiconductor device, sidewalls are made of at least one of SiO2, SiN, SiON, and a top insulating film or gate insulating film is made of an oxide of at least one metal M selected from a rare earth metal group consisting of Y, Zr, Hf, and Al, Si so that the number ratio Si/M of Si to the metal M is set to no less than a number ratio at a solid solubility limit of SiO2 in a composite oxide including the metal M and Al and the dielectric constant of the top insulating film or gate insulating film is equal to or less than the dielectric constant of Al2O3 and so that the number ratio Al/M of Al to the metal M is set to no less than a number ratio Al/M where the crystallization of an oxide of the metal M is suppressed by the reaction of the Al element and set to no more than a number ratio where the crystallization of the Al2O3 is suppressed through the action of the metal M.
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