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YTTRIUM OXIDE MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND MANUFACTURING PROCES 发明申请

2023-08-03 4560 131K 0

专利信息

申请日期 2025-07-09 申请号 JP2009026137
公开(公告)号 JP2009215154A 公开(公告)日 2009-09-24
公开国别 JP 申请人省市代码 全国
申请人 NGK INSULATORS LTD
简介 PROBLEM TO BE SOLVED : To provide an yttrium oxide material with enhanced strength and its manufacturing process. SOLUTION : The base body 22 for an electrostatic chuck 20 being a member of a semiconductor manufacturing apparatus is composed of an yttrium oxide material containing at least yttrium oxide (Y2O3), silicon carbide (SiC), and a compound containing an RE (rare-earth element), Si, O, and N. The yttrium oxide material contains an RE8Si4N4O14 in which RE is La, Y and the like as the compound containing an RE (rare-earth element), Si, O, and N. The RE8Si4N4O14 is a compound generated from Y2O3, the major ingredient of the raw material, Si3N4 added as a raw material and the like during sintering. This compound and SiC contained in yttrium oxide improves the mechanical strength and the volume resistivity. COPYRIGHT : (C)2009, JPO&INPIT


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