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METAL SILICON NITRIDE OR METAL SILICON OXYNITRIDE SUBMICRON PHOSPHOR PARTICLES AND METHODS FOR SYNTH 发明申请

2023-07-29 5030 906K 0

专利信息

申请日期 2025-06-25 申请号 WOUS09001771
公开(公告)号 WO2009117148A2 公开(公告)日 2009-09-24
公开国别 WO 申请人省市代码 全国
申请人 NANOGRAM CORPORATION; RAVILISETTY Padmanabha R; CHIRUVOLU Shivkumar; KAMBE Nobuyuki; JAISWAL Abhishek
简介 Submicron powders of metal silicon nitrides and metal silicon oxynitrides are synthesized using nanoscale particles of one or more precursor materials using a solid state reaction. For example, nanoscale powders of silicon nitride are useful precursor powders for the synthesis of metal silicon nitride and metal silicon oxynitride submicron powders. Due to the use of the nanoscale precursor materials for the synthesis of the submicron phosphor powders, the product phosphors can have very high internal quantum efficiencies. The phosphor powders can comprise a suitable dopant activator, such as a rare earth metal element dopant.


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