| 简介 |
Provided is a bonded wafer manufacturing method wherein an ion-implanted layer is formed inside of a bond wafer by implanting at least one type of gas ions of either hydrogen ions or rare gas ions from a surface of the bond wafer, the ion-implanted bond wafer surface and a base wafer surface are bonded directly or with an insulating film in between, then, the bond wafer is peeled at the ion-implanted layer. An oxide film is grown at least on the bonding surface of the bond wafer or the base wafer, and after etching the grown oxide film, the etched oxide film is bonded to the other wafer. Thus, at the time of bonding the wafers directly or through the insulating film, particles on the bonding surface are reduced, and defects generated in a bonded wafer thin film is eliminated by firmly bonding the wafers. |
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