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Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and 发明申请

2023-07-21 1020 1366K 0

专利信息

申请日期 2025-07-10 申请号 US12379868
公开(公告)号 US20090224399A1 公开(公告)日 2009-09-10
公开国别 US 申请人省市代码 全国
申请人 Youichirou Kaga; Junichi Watanabe
简介 A silicon nitride substrate having appropriately adjusted warpage and surface roughness can be obtained by mixing magnesium oxide of 3 to 4 wt % and at least one kind of rare-earth element oxide of 2 to 5 wt % with silicon nitride source material powder to form a sheet-molded body, sintering the sheet-molded body, and performing a heat treatment at a temperature of 1, 550 to 1, 700 degree C. with a pressure of 0.5 to 6.0 kPa with a plurality of substrates being stacked. Also, a silicon nitride circuit board and a semiconductor module using the same are provided.


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