| 申请日期 | 2025-08-25 | 申请号 | JP11139997 |
| 公开（公告）号 | JP4327942B2 | 公开（公告）日 | 2009-09-09 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | TDK Corporation3067 | ||
| 简介 | A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. Preferably the metal film (4) comprises at Pt group metal and is formed on an oriented faceted buffer layer (3) comprising zirconium oxide and/or rare earth oxide. A film bulk acoustic resonator having an extremely broad band is realized. | ||
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