| 简介 |
PROBLEM TO BE SOLVED : To provide a nonvolatile memory element which exhibits excellent thermal stability.
SOLUTION : A nonvolatile memory element comprises a semiconductor region 11, a source region 12 and a drain region 13 provided in the semiconductor region 11 separated from each other, a tunnel insulating film 14 formed on the semiconductor region 11 between the source region 12 and the drain region 13, a charge storage layer 15 formed on the tunnel insulating film 14, a block insulating film 16 formed on the charge storage layer 15, and a control gate electrode 17 provided on the block insulating film 16. The charge storage layer 15 includes an oxide, a nitride or an oxynitride which contains at least one of Hf, Al, Zr, Ti, or a rare earth metal and is crystallized entirely or partially. The block insulating film 16 includes an oxide, an oxynitride, silicate or aluminate which contains at least one rare earth metal.
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