| 简介 |
A thin film capacitor element composition having a bismuth layered compound with a c-axis oriented substantially vertical to the substrate surface, wherein the bismuth layered compound is expressed by the formula (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3M+3, the symbol m in the formula is an odd number, at least part of the Bi and/or A of the bismuth layered compound is substituted by a rare earth element, and the number of moles substituted by the rare earth element is larger than 1.0 and 2.8 or less with respect to the number of moles (m+1) of the total of Bi and A. |
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