| 简介 |
PROBLEM TO BE SOLVED : To provide a method for forming an insulating film which planarizes the shape of interface of silicon and an insulating film extremely when the insulating film is formed by CVD.
SOLUTION : By using a plasma processing device 100 for introducing a microwave into a chamber 1 by a flat antenna 31 having a plurality of holes, the surface of silicon is oxidized to form a silicon oxide film (step S1) and then a silicon oxide film is deposited thereon as an insulating film by CVD (step S4). Furthermore, by using the plasma processing device 100, processing gas containing rare gas and oxygen is introduced into the chamber 1 and a microwave is introduced by the flat antenna 31, plasma is generated under pressure conditions in the range of 6.7-267 Pa and the insulating film is modified by the plasma (step S6).
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