| 简介 |
PROBLEM TO BE SOLVED : To provide a method for forming an insulating film which forms an insulating film having a thickness equivalent to that in conventional CVD and good film quality under low temperature.
SOLUTION : A CVD step (step S2) for depositing a silicon oxide film as an insulating film on a silicon layer by CVD, and a plasma modification step (step S4) for modifying the silicon oxide film by plasma generated under pressure conditions in the range of 6.7-267 Pa using processing gas containing rare gas and oxygen are carried out until the silicon oxide film reaches a desired film thickness.
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