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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 发明申请

2023-10-03 4680 1380K 0

专利信息

申请日期 2025-07-11 申请号 WOJP08003544
公开(公告)号 WO2009101664A1 公开(公告)日 2009-08-20
公开国别 WO 申请人省市代码 全国
申请人 FUJITSU LIMITED; MIZUKOSHI Masataka; IWAI Taisuke
简介 An electrode formed on a part of a surface of a semiconductor substrate and front ends of a forest of conductive nanotubes on a surface of a substrate for growth are exposed to a rare gas plasma. The front ends of the conductive nanotubes exposed to the rare gas plasma are brought into contact with the electrode, so that the conductive nanotubes are fixed to the electrode. The substrate for growth is removed from the semiconductor substrate together with the conductive nanotubes which are not in contact with the electrode, while leaving the conductive nanotubes fixed to the electrode on the semiconductor substrate side.


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