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LOW PERMITTIVITY CERAMIC SUBSTRATE FOR HIGH FREQUENCY COMPONENT, AND METHOD FOR MANUFACTURING THE S 发明申请

2023-04-25 3700 93K 0

专利信息

申请日期 2025-06-28 申请号 JP2009121171
公开(公告)号 JP2009179560A 公开(公告)日 2009-08-13
公开国别 JP 申请人省市代码 全国
申请人 MURATA MANUFACTURING CO
简介 PROBLEM TO BE SOLVED : To provide a low permittivity ceramic substrate low in relative permittivity, small in loss in a high frequency zone, and small in temperature dependence, enabling low temperature sintering where conductors having high electric conductivity such as Ag, Au and Cu can be simultaneously sintered, and a method for manufacturing the same. SOLUTION : This low permittivity ceramic substrate for high frequency components contains at least an LnBO3 crystal (Ln is one or more rare earth elements among Y, La and Nd) and is obtained by firing a raw material comprising, in mol% of components expressed by oxides, 40-65% Al2O3, 15-35% B2O3, 10-20% CaO, 0.1-14% ZnO, 0-2% MnO, 0-2% R2O (R is one or more among Li, Na and K) and 0.1-2% Ln2O3. COPYRIGHT : (C)2009, JPO&INPIT


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