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YTTRIUM OXIDE MATERIAL, MEMBER FOR USE IN SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR PR 发明申请

2023-08-28 3920 664K 0

专利信息

申请日期 2025-06-27 申请号 US12369106
公开(公告)号 US20090200523A1 公开(公告)日 2009-08-13
公开国别 US 申请人省市代码 全国
申请人 Yoshimasa KOBAYASHI; Yuji Katsuda
简介 A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide material contains RE8Si4N4O14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14 is produced during a sintering step of a raw material that contains the main component Y2O3 and an accessory component Si3N4. Y8Si4N4O14 and SiC in the yttrium oxide material improve mechanical strength and volume resistivity.


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