| 申请日期 | 2026-04-24 | 申请号 | WOJP09050799 |
| 公开（公告）号 | WO2009096270A1 | 公开（公告）日 | 2009-08-06 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | CANON ANELVA CORPORATION; DAIGO Yoshiaki; ISHIBASHI Keiji | ||
| 简介 | Disclosed is a method for producing a highly crystalline high-quality AlN heteroepitaxial crystal by sputtering. Specifically, after exposing the surface of a sapphire substrate to a plasma using a nitrogen gas or a mixed gas of a nitrogen gas and a rare gas, a reactive sputtering is performed using a nitrogen gas or a mixed gas of a nitrogen gas and a rare gas, while maintaining vacuum, so that AlN is heteroepitaxially grown on the surface of the sapphire substrate. | ||
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