| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a group III nitride crystal, by which the crystallinity and the reproducibility of crystal growth can be improved by suppressing oxidation of an alkali metal or an alkaline earth metal used as flux when the group III nitride crystal is grown, and to provide an apparatus for manufacturing the group III nitride crystal.
SOLUTION : When the group III nitride crystal is manufactured in a crystal growth vessel 10, the method for manufacturing the group III nitride crystal is characterized by previously forming an alloy of an alkali metal or an alkaline earth metal and a group III element, e.g. NaGa 26, then covering the surface of the alloy with an inert substance such as Ga 22, forming a solution containing nitrogen by using the covered alloy, and growing the crystal.
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