| 申请日期 | 2025-06-29 | 申请号 | US12022178 |
| 公开（公告）号 | US20090191339A1 | 公开（公告）日 | 2009-07-30 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Michael A Mastro; Jaime A Freitas; Charles R Eddy JR; Jihyun Kim | ||
| 简介 | A method of deposition by : depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal. | ||
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