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PRODUCING METHOD AND USE OF CRYSTALLIZED METALLIC OXIDE THIN FILM 发明授权

2023-12-16 4470 320K 0

专利信息

申请日期 2025-07-15 申请号 KR1020070080885
公开(公告)号 KR100910145B1 公开(公告)日 2009-07-24
公开国别 KR 申请人省市代码 全国
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
简介 Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.


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