| 简介 |
The procedure, for use e.g. in semiconductors to increase the density of a porous substrate consists applying a fluid compound containing at least one reagent fluid precursor of a material that forms a solid deposit and an optional dilution fluid. The compound is applied at a temperature and pressure that enable a solid deposit to be formed directly on or inside the substrate while maintaining the reagent fluid and/or dilution fluid in a supercritical state. The dilution fluid used for the procedure is chemically neutral relative to the solid deposit formed, and is selected e.g. from rare atmospheric gases, nitrogen and carbon dioxide. |
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