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Mo SPUTTERING TARGET MATERIAL 发明申请

2023-06-01 4130 438K 0

专利信息

申请日期 2025-06-25 申请号 JP2006271017
公开(公告)号 JP2008088503A 公开(公告)日 2008-04-17
公开国别 JP 申请人省市代码 全国
申请人 HITACHI METALS LTD
简介 PROBLEM TO BE SOLVED : To provide an Mo sputtering target material having excellent plastic workability in a low temperature region. SOLUTION : The Mo sputtering target material has a composition consisting of, by mass, 1 to 100 ppm of one or more elements selected from rare earth elements and the balance Mo with inevitable impurities. As to the rare earth elements, it is preferable to select either or both of La and Ce. Further, in order to obtain the effects of the rare earth elements with more certainty, it is preferable to minimize gas components, such as N and O, and it is desirable to regulate the contents of N and O to ≤50 ppm and ≤500 ppm, respectively, and also to regulate the total content of N and O to ≤500 ppm. COPYRIGHT : (C)2008, JPO&INPIT


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